Jeffrey Glass

Publications

  • Ubnoske, SM; Raut, AS; Brown, B; Parker, CB; Stoner, BR; Glass, JT, Perspectives on the Growth of High Edge Density Carbon Nanostructures: Transitions from Vertically Oriented Graphene Nanosheets to Graphenated Carbon Nanotubes., The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol 118 no. 29 (2014), pp. 16126-16132 [10.1021/jp502317u] [abs].
  • Sund, JB; Causey, CP; Wolter, SD; Parker, CB; Stoner, BR; Toone, EJ; Glass, JT,
    Diamond surface functionalization with biomimicry – Amine surface tether and thiol moiety for electrochemical sensors
    , Applied Surface Science, vol 301 (2014), pp. 293-299 [10.1016/j.apsusc.2014.02.067] [abs].
  • Stoner, BR; Brown, B; Glass, JT,
    Selected topics on the synthesis, properties and applications of multiwalled carbon nanotubes
    , Diamond and Related Materials, vol 42 (2014), pp. 49-57 [10.1016/j.diamond.2013.12.003] [abs].
  • Raut, AS; Cunningham, GB; Parker, CB; Klem, EJD; Stoner, BR; Deshusses, MA; Glass, JT,
    Electrochemical Disinfection of Human Urine for Water-Free and Additive-Free Toilets Using Boron-Doped Diamond Electrodes
    , ECS Transactions, vol 53 no. 17 (2013), pp. 1-11 [10.1149/05317.0001ecst] [abs].
  • Peng, Q; Kalanyan, B; Hoertz, PG; Miller, A; Kim, DOH; Hanson, K; Alibabaei, L; Liu, J; Meyer, TJ; Parsons, GN; Glass, JT, Solution-processed, antimony-doped tin oxide colloid films enable high-performance TiO2 photoanodes for water splitting., Nano Letters: a journal dedicated to nanoscience and nanotechnology, vol 13 no. 4 (2013), pp. 1481-1488 [10.1021/nl3045525] [abs].
  • Raut, AS; Parker, CB; Stoner, BR; Glass, JT, Effect of porosity variation on the electrochemical behavior of vertically aligned multi-walled carbon nanotubes, Electrochemistry Communications, vol 19 no. 1 (2012), pp. 138-141 [10.1016/j.elecom.2012.03.021] [abs].
  • Peng, Q; Lewis, JS; Hoertz, PG; Glass, JT; Parsons, GN, Atomic layer deposition for electrochemical energy generation and storage systems, Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films, vol 30 no. 1 (2012) [10.1116/1.3672027] [abs].
  • Stoner, BR; Glass, JT, Carbon nanostructures: A morphological classification for charge density optimization, Diamond and Related Materials, vol 23 (2012), pp. 130-134 [10.1016/j.diamond.2012.01.034] [abs].
  • Brown, B; Parker, CB; Stoner, BR; Grill, WM; Glass, JT, Electrochemical charge storage properties of vertically aligned carbon nanotube films: Effects of thermal oxidation, The Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, vol 116 no. 36 (2012), pp. 19526-19534 [10.1021/jp304419a] [abs].
  • Stoner, BR; Glass, JT, Nanoelectronics: Nothing is like a vacuum, Nature Nanotechnology, vol 7 no. 8 (2012), pp. 485-487 [10.1038/nnano.2012.130] [abs].
  • Madison, AC; Parker, CB; Glass, JT; Stoner, BR, Modeling operational modes of a bipolar vacuum microelectronic device, IEEE Electron Device Letters, vol 33 no. 10 (2012), pp. 1498-1500 [10.1109/LED.2012.2208445] [abs].
  • Parker, CB; Raut, AS; Brown, B; Stoner, BR; Glass, JT, Three-dimensional arrays of graphenated carbon nanotubes, Journal of Materials Research, vol 27 no. 7 (2012), pp. 1046-1053 [10.1557/jmr.2012.43] [abs].
  • Brown, B; Parker, CB; Stoner, BR; Grill, WM; Glass, JT, Electrochemical charge storage properties of vertically aligned carbon nanotube films: The activation-enhanced length effect, Journal of Electrochemical Society, vol 158 no. 12 (2011), pp. K217-K224 [10.1149/2.093112jes] [abs].
  • Stoner, BR; Piascik, JR; Gilchrist, KH; Parker, CB; Glass, JT, A bipolar vacuum microelectronic device, IEEE Transactions on Electron Devices, vol 58 no. 9 (2011), pp. 3189-3194 [10.1109/TED.2011.2157930] [abs].
  • Brown, B; Parker, CB; Stoner, BR; Glass, JT, Growth of vertically aligned bamboo-like carbon nanotubes from ammonia/methane precursors using a platinum catalyst, Carbon, vol 49 no. 1 (2011), pp. 266-274 [10.1016/j.carbon.2010.09.018] [abs].
  • Fissell, WH; Conlisk, AT; Datta, S; Magistrelli, JM; Glass, JT; Fleischman, AJ; Roy, S, High Knudsen number fluid flow at near-standard temperature and pressure conditions using precision nanochannels, Microfluidics and Nanofluidics, vol 10 no. 2 (2011), pp. 425-433 [10.1007/s10404-010-0682-4] [abs].
  • Stoner, BR; Raut, AS; Brown, B; Parker, CB; Glass, JT, Graphenated carbon nanotubes for enhanced electrochemical double layer capacitor performance, Applied Physics Letters, vol 99 no. 18 (2011) [10.1063/1.3657514] [abs].
  • Evans-Nguyen, T; Parker, CB; Hammock, C; Monica, AH; Adams, E; Becker, L; Glass, JT; Cotter, RJ, Carbon nanotube electron ionization source for portable mass spectrometry, Analytical Chemistry, vol 83 no. 17 (2011), pp. 6527-6531 [10.1021/ac200643m] [abs].
  • Natarajan, S; Parker, CB; Piascik, JR; Gilchrist, KH; Stoner, BR; Glass, JT, Analysis of 3-panel and 4-panel microscale ionization sources, Journal of Applied Physics, vol 107 no. 12 (2010) [10.1063/1.3429220] [abs].
  • Wolter, SD; Brown, B; Parker, CB; Stoner, BR; Glass, JT, The effect of gold on platinum oxidation in homogeneous Au-Pt electrocatalysts, Applied Surface Science, vol 257 no. 5 (2010), pp. 1431-1436 [10.1016/j.apsusc.2010.08.062] [abs].
  • Raut, AS; Parker, CB; Glass, JT, A method to obtain a Ragone plot for evaluation of carbon nanotube supercapacitor electrodes, Journal of Materials Research, vol 25 no. 8 (2010), pp. 1500-1506 [10.1557/jmr.2010.0192] [abs].
  • Natarajan, S; Gilchrist, KH; Piascik, JR; Parker, CB; Glass, JT; Stoner, BR, Simulation and testing of a lateral, microfabricated electron-impact ion source, Applied Physics Letters, vol 94 no. 4 (2009) [10.1063/1.3046733] [abs].
  • Ma, SY; Chen, HX; Glass, JT; Parker, CB; Li, Y, Influence of Al-doping and oxygen partial pressure on the optical properties of ZnO films, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009, vol 1 (2009), pp. 273-276 [abs].
  • Russell, ZE; Russell, PE; Glass, JT; Parker, CB; Stoner, BR; Gilchrist, KH; Piascik, JR, Development of a micro mass spectrometer: Analysis of particle behavior in mems ion lens systems, Microscopy and Microanalysis, vol 15 no. SUPPL. 2 (2009), pp. 242-243 [10.1017/S1431927609098870] [abs].
  • Brown, B; Wolter, SD; Stoner, BR; Glass, JT, Alloying effects of cosputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte, Journal of Electrochemical Society, vol 155 no. 8 (2008), pp. B852-B859 [10.1149/1.2939210] [abs].
  • Natarajan, S; Parker, CB; Glass, JT; Piascik, JR; Gilchrist, KH; Bower, CA; Stoner, BR, High voltage microelectromechanical systems platform for fully integrated, on-chip, vacuum electronic devices, Applied Physics Letters, vol 92 no. 22 (2008) [10.1063/1.2938075] [abs].
  • Naskar, S; Wolter, SD; Bower, CA; Stoner, BR; Glass, JT, Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study, Journal of Materials Research, vol 23 no. 5 (2008), pp. 1433-1442 [10.1557/jmr.2008.0176] [abs].
  • Carlsson, B; Dumitriu, M; Glass, JT; Nard, CA; Barrett, R, Intellectual property (IP) management: Organizational processes and structures, and the role of IP donations, Journal of Technology Transfer, vol 33 no. 6 (2008), pp. 549-559 [10.1007/s10961-008-9082-2] [abs].
  • Zhang, XD; Lewis, JS; Parker, CB; Glass, JT; Wolter, SD, Measurement of reactive and condensable gas permeation using a mass spectrometer, Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films, vol 26 no. 5 (2008), pp. 1128-1137 [10.1116/1.2952453] [abs].
  • Brown, B; Wolter, SD; Stoner, BR; Glass, JT, Alloying effects of co-sputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte, ECS Transactions, vol 11 no. 32 (2008), pp. 49-65 [10.1149/1.2992493] [abs].
  • Natarajan, S; Parker, CB; Glass, JT; Bower, CA; Gilchrist, KH; Piascik, JR; Stoner, BR, High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices, 2008 IEEE International Vacuum Electronics Conference, IVEC with 9th IEEE International Vacuum Electron Sources Conference, IVESC (2008), pp. 24-25 [10.1109/IVELEC.2008.4556325] [abs].
  • Zhang, XD; Lewis, JS; Wolter, SD; Parker, CB; Glass, JT, High sensitivity permeation measurement system for "ultrabarrier" thin films, Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films, vol 25 no. 6 (2007), pp. 1587-1593 [10.1116/1.2794075] [abs].
  • Bower, CA; Gilchrist, KH; Piascik, JR; Stoner, BR; Natarajan, S; Parker, CB; Wolter, SD; Glass, JT, On-chip electron-impact ion source using carbon nanotube field emitters, Applied Physics Letters, vol 90 no. 12 (2007) [10.1063/1.2715457] [abs].
  • Evans, RD; Doll, GL; Meng, WJ; Mei, F; Glass, JT, Effects of applied substrate bias during reactive sputter deposition of nanocomposite tantalum carbide/amorphous hydrocarbon thin films, Thin Solid Films, vol 515 no. 13 (2007), pp. 5403-5410 [10.1016/j.tsf.2006.12.034] [abs].
  • Youngsman, J; Marx, B; Wolter, S; Glass, J; Moll, A, Miniature multi-electrode electrochemical cell in LTCC, Journal of Microelectronics and Electronic Packaging, vol 4 no. 1 (2007), pp. 31-36 [abs].
  • Fissell, WH; Manley, S; Dubnisheva, A; Glass, J; Magistrelli, J; Eldridge, AN; Fleischman, AJ; Zydney, AL; Roy, S, Ficoll is not a rigid sphere, American Journal of Physiology - Renal Fluid and Electrolyte Physiology, vol 293 no. 4 (2007), pp. F1209-F1213 [10.1152/ajprenal.00097.2007] [abs].
  • Gilchrist, KH; Bower, CA; Lueck, MR; Piascik, JR; Stoner, BR; Natarajan, S; Parker, CB; Glass, JT, A novel ion source and detector for a miniature mass spectrometer, Proceedings of IEEE Sensors (2007), pp. 1372-1375 [10.1109/ICSENS.2007.4388667] [abs].
  • Nemanich Robert, J; Glass Jeffrey, T, Proceedings of the joint 11th International Conference on New Diamond Science and Technology and the 9th Applied Diamond Conference, Research Triangle Park, North Carolina, 15-19 May 2006, Diamond and Related Materials, vol 15 no. 11-12 (2006), pp. VII-VII [abs].
  • Nemanich, RJ; Glass, JT, ICNDST & ADC 2006 presents latest research in diamond and related materials, Materials Research Society (MRS) Bulletin, vol 31 no. 9 (2006) [abs].
  • Evans, RD; Doll, GL; Glass, JT, Mechanical property development in reactively sputtered tantalum carbide/amorphous hydrocarbon thin films, Journal of Materials Research, vol 21 no. 6 (2006), pp. 1500-1511 [10.1557/jmr.2006.0174] [abs].
  • Bower, CA; Gilchrist, KH; Broderick, S; Piascik, JR; Stoner, BR; Parker, CB; Natarajan, S; Wolter, SD; Glass, JT, High voltage compatible micromachined vacuum electronic devices with carbon nanotube cold cathodes, 2006 IEEE International Vacuum Electronics Conference held jointly with 2006 IEEE International Vacuum Electron Sources, IVEC/IVESC 2006 (2006), pp. 471-472 [abs].
  • Youngsman, J; Marx, B; Schimpf, M; Wolter, S; Glass, J; Moll, A, Low temperature co-fired ceramics for micro-fluidics, Proceedings - Electronic Components and Technology Conference, vol 2006 (2006), pp. 699-704 [10.1109/ECTC.2006.1645733] [abs].
  • Youngsman, J; Marx, B; Wolter, S; Glass, J; Moll, A, Miniature multi-electrode electrochemical cell in LTCC, IMAPS/ACerS - 2nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2006 (2006), pp. 249-252 [abs].
  • Evans, RD; Howe, JY; Bentley, J; Doll, GL; Glass, JT, Influence of deposition parameters on the composition and structure of reactively sputtered nanocomposite TaC/a-C:H thin films, Journal of Materials Research, vol 20 no. 9 (2005), pp. 2583-2596 [10.1557/JMR.2005.0324] [abs].
  • Yang, PC; Prater, JT; Liu, W; Glass, JT; Davis, RF, The formation of epitaxial hexagonal boron nitride on nickel substrates, Journal of Electronic Materials, vol 34 no. 12 (2005), pp. 1558-1564 [abs].
  • Naskar, S; Wolter, SD; Bower, CA; Stoner, BR; Glass, JT, Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films, Applied Physics Letters, vol 87 no. 26 (2005), pp. 1-3 [10.1063/1.2158022] [abs].
  • Naskar, S; Bower, CA; Weiter, SD; Stoner, BR; Glass, JT, Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma, Materials Research Society Symposium - Proceedings, vol 862 (2005), pp. 61-66 [abs].
  • Naskar, S; Bower, CA; Yadon, LN; Wolter, SD; Stoner, BR; Glass, JT, Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films, Materials Research Society Symposium - Proceedings, vol 848 (2005), pp. 171-176 [abs].
  • Holmes, JS; Glass, JT, Internal R&D - Vital but only one piece of the innovation puzzle, Research Technology Management: international journal of research management, vol 47 no. 5 (2004), pp. 7-10 [abs].
  • Evans, RD; Bentley, J; More, KL; Doll, GL; Glass, JT, Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen, Journal of Applied Physics, vol 96 no. 1 (2004), pp. 273-279 [10.1063/1.1760232] [abs].
  • Purswani, JM; Pons, AP; Glass, JT; Evans, RD; Cogdell, JD, Effects of annealing on the mechanical and electrical properties of DC sputtered tantalum pentoxide (Ta2O5) thin films, Materials Research Society Symposium - Proceedings, vol 811 (2004), pp. 63-68 [abs].
  • Glass, JT; Ensing, IM; DeSanctis, G, Managing the ties between central R & D and business units, Research Technology Management, vol 46 no. 1 (2003), pp. 24-31 [abs].
  • Evans, RD; Doll, GL; Jr, PWM; Bentley, J; More, KL; Glass, JT, The effects of structure, composition, and chemical bonding on the mechanical properties of Si-aC:H thin films, Surface and Coatings Technology, vol 157 no. 2-3 (2002), pp. 197-206 [10.1016/S0257-8972(02)00164-0] [abs].
  • Evans, RD; Doll, GL; Glass, JT, Relationships between the thermal stability, friction, and wear properties of reactively sputtered Si-aC:H thin films, Journal of Materials Research, vol 17 no. 11 (2002), pp. 2888-2896 [abs].
  • DeSanctis, G; Glass, JT; Ensing, IM, Organizational designs for R & D, Academy of Management Executive, vol 16 no. 3 (2002), pp. 55-66 [abs].
  • Evans, RD; Doll, GL; Jr, PWM; Bentley, J; More, KL; Glass, JT, Relationships between the structural, chemical, and mechanical properties of Si-aC:H thin films, Materials Research Society Symposium - Proceedings, vol 697 (2002), pp. 261-270 [abs].
  • Glass, JT; Fox, BA; Dreifus, DL; Stoner, BR, Diamond for electronics: Future prospects of diamond SAW devices, MRS Bulletin, vol 23 no. 9 (1998), pp. 49-55 [abs].
  • Angus, JC; Bachmann, PK; BuckleyGolder, I; Fukunaga, O; Glass, JT; Kamo, M, Preface to the proceedings of the 7th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '96), Tours, France, September 8-13, 1996, Diamond and Related Materials, vol 6 no. 2-4 (1997), pp. R11-R11 [abs].
  • Glass, JT; McCann, JF; Crothers, DSF; Momberger, K, Radiative electron capture by relativistic heavy ions, Proceedings of the Royal Society of London, Series A: Mathematical, Physical and Engineering Sciences, vol 453 no. 1957 (1997), pp. 387-402 [10.1098/rspa.1997.0022] [abs].
  • Bachmann, PK; BuckleyGolder, I; Glass, JT; Kamo, M, Preface to the Proceedings of the 6th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '95), Barcelona, Spain, September 10-15, 1995, Diamond and Related Materials, vol 5 no. 3-5 (1996), pp. R15-R15 [abs].
  • Yang, PC; Liu, W; Tucker, DA; Wolden, CA; Davis, RF; Glass, JT; Prater, JT; Sitar, Z, Nucleation and growth of oriented diamond films on nickel substrates, Materials Research Society Symposium - Proceedings, vol 423 (1996), pp. 281-286 [abs].
  • Liu, W; Yang, PC; Tucker, DA; Wolden, CA; Davis, RF; Glass, JT; Prater, JT; Sitar, Z, TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates, Materials Research Society Symposium - Proceedings, vol 423 (1996), pp. 457-462 [abs].
  • Goeller, PT; Wang, Z; Sayers, DE; Glass, JT; Nemanich, RJ, Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source, Materials Research Society Symposium - Proceedings, vol 402 (1996), pp. 511-516 [abs].
  • ZHU, W; YANG, PC; GLASS, JT; AREZZO, F, DIAMOND NUCLEATION AND GROWTH ON REACTIVE TRANSITION-METAL SUBSTRATES, Journal of Materials Research, vol 10 no. 6 (1995), pp. 1455-1460 [abs].
  • BACHMANN, PK; BUCKLEYGOLDER, IM; GLASS, JT; KAMO, M, PREFACE TO THE PROCEEDINGS OF THE 5TH EUROPEAN CONFERENCE ON DIAMOND, DIAMOND-LIKE AND RELATED MATERIALS (DIAMOND-FILMS-94), IL-CIOCCO, ITALY, SEPTEMBER 25-30, 1994, Diamond and Related Materials, vol 4 no. 4 (1995), pp. R15-R15 [abs].
  • Wolter, SD; McClure, MT; Glass, JT; Stoner, BR, Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates, Applied Physics Letters, vol 66 no. 21 (1995) [10.1063/1.113483] [abs].
  • Liu, W; Tucker, DA; Yang, P; Glass, JT, Nucleation of oriented diamond particles on cobalt substrates, Journal of Applied Physics, vol 78 no. 2 (1995), pp. 1291-1296 [10.1063/1.360768] [abs].
  • Wolter, SD; Glass, JT; Stoner, BR, Investigation of the process factor space on bias-enhanced nucleation of diamond on silicon, Thin Solid Films, vol 261 no. 1-2 (1995), pp. 4-11 [abs].
  • Wolter, SD; Glass, JT; Stoner, BR, Bias induced diamond nucleation studies on refractory metal substrates, Journal of Applied Physics, vol 77 no. 10 (1995), pp. 5119-5124 [10.1063/1.359322] [abs].
  • Tucker, DA; Seo, DK; Whangbo, MH; Sivazlian, FR; Stoner, BR; Bozeman, SP; Sowers, AT; Nemanich, RJ; Glass, JT, Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth, Surface Science, vol 334 no. 1-3 (1995), pp. 179-194 [abs].
  • Jr, PWM; Somashekhar, A; Glass, JT; Prater, JT, Growth of diamond films using an enclosed combustion flame, Journal of Applied Physics, vol 78 no. 6 (1995), pp. 4144-4156 [10.1063/1.359874] [abs].
  • Liu, J; Zhirnov, VV; Myers, AF; Wojak, GJ; Choi, WB; Hren, JJ; Wolter, SD; McClure, MT; Stoner, BR; Glass, JT, Field emission characteristics of diamond coated silicon field emitters, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol 13 no. 2 (1995), pp. 422-426 [10.1116/1.587961] [abs].
  • Zhu, W; Sivazlian, FR; Stoner, BR; Glass, JT, Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition, Journal of Materials Research, vol 10 no. 2 (1995), pp. 425-430 [abs].
  • Bozeman, SP; Tucker, DA; Stoner, BR; Glass, JT; Hooke, WM, Diamond deposition using a planar radio frequency inductively coupled plasma, Applied Physics Letters (1995) [10.1063/1.113793] [abs].
  • Bachmann, PK; Buckley-Golder, IM; Glass, JT; Kamo, M, Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25-30, 1994, Diamond and Related Materials, vol 4 no. 4 (1995) [abs].
  • Wolter, SD; McClure, MT; Glass, JT; Stoner, BR, Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates, Applied Physics Letters, vol 66 (1995) [abs].
  • BACHMANN, PK; BUCKLEYGOLDER, I; GLASS, JT; KAMO, M, PREFACE TO THE PROCEEDINGS OF THE 4TH EUROPEAN CONFERENCE ON DIAMOND, DIAMOND-LIKE AND RELATED MATERIALS (DIAMOND FILMS 93), ALBUFEIRA, PORTUGAL, SEPTEMBER 20-24, 1993, Diamond and Related Materials, vol 3 no. 4-6 (1994), pp. R15-R15 [abs].
  • McClure, MT; Windheim, JAV; Glass, JT; Prater, JT, Effect of native SiO2 layer on the nucleation of diamond using a combustion flame, Diamond and Related Materials, vol 3 no. 3 (1994), pp. 239-244 [abs].
  • Wolter, SD; Stoner, BR; Glass, JT, The effect of substrate material on bias-enhanced diamond nucleation, Diamond and Related Materials, vol 3 no. 9 (1994), pp. 1188-1195 [abs].
  • Glass, JT; McCann, JF; Crothers, DSF, Relativistic continuum distorted wave theory for electron capture, Journal of Physics B: Atomic, Molecular and Optical Physics, vol 27 no. 15 (1994) [10.1088/0953-4075/27/15/020] [abs].
  • Yang, PC; Zhu, W; Glass, JT, Diamond nucleation on nickel substrates seeded with non-diamond carbon, Journal of Materials Research, vol 9 no. 5 (1994), pp. 1063-1066 [abs].
  • Sivazlian, FR; Glass, JT; Stoner, BR, Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy, Journal of Materials Research, vol 9 no. 10 (1994), pp. 2487-2489 [abs].
  • Liu, J; Zhirnov, VV; Wojak, GJ; Myers, AF; Choi, WB; Hren, JJ; Wolter, SD; McClure, MT; Stoner, BR; Glass, JT, Electron emission from diamond coated silicon field emitters, Applied Physics Letters, vol 65 no. 22 (1994), pp. 2842-2844 [10.1063/1.112538] [abs].
  • Bergman, L; McClure, MT; Glass, JT; Nemanich, RJ, Origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films, Journal of Applied Physics, vol 76 no. 5 (1994), pp. 3020-3027 [10.1063/1.357508] [abs].
  • Bachmann, PK; Buckley-Golder, I; Glass, JT; Kamo, M, Preface to the proceedings of the 4th European conference on diamond, diamond-like and related materials (diamond films '93), Albufeira, Portugal, September 20-24, 1993, Diamond and Related Materials, vol 3 no. 4-6 (1994) [abs].
  • Jr, PWM; Somashekhar, A; Glass, JT; Prater, JT, Nucleation enhancement and growth of diamond films using an enclosed combustion flame, Materials Research Society Symposium - Proceedings, vol 349 (1994), pp. 403-408 [abs].
  • Bergman, L; McClure, MT; Glass, JT; Nemanich, RJ, Recombination processes of the broadband and 1.681 eV optical centers in diamond films, Materials Research Society Symposium - Proceedings, vol 339 (1994), pp. 663-668 [abs].
  • Wolter, SD; Stoner, BR; Yang, PC; Lui, W; Glass, JT, Diamond nucleation studies on refractory metals and nickel, Materials Research Society Symposium - Proceedings, vol 339 (1994), pp. 291-296 [abs].
  • Bergman, L; Stoner, BR; Turner, KF; Glass, JT; Nemanich, RJ, Microphotoluminescence and Raman scattering study of defect formation in diamond films, Journal of Applied Physics, vol 73 no. 8 (1993), pp. 3951-3957 [10.1063/1.352858] [abs].
  • Kohl, R; Wild, C; Herres, N; Koidl, P; Stoner, BR; Glass, JT, Oriented nucleation and growth of diamond films on β-SiC and Si, Applied Physics Letters, vol 63 no. 13 (1993), pp. 1792-1794 [10.1063/1.110664] [abs].
  • Zhu, W; Wang, XH; Stoner, BR; Ma, GHM; Kong, HS; Braun, MWH; Glass, JT, Diamond and β-SiC heteroepitaxial interfaces: A theoretical and experimental study, Physical Review B - Condensed Matter and Materials Physics, vol 47 no. 11 (1993), pp. 6529-6542 [10.1103/PhysRevB.47.6529] [abs].
  • Zhu, W; Wang, XH; Stoner, BR; Kong, HS; Braun, MWH; Glass, JT, Geometric modeling of the diamond-β-SiC heteroepitaxial interface, Diamond and Related Materials, vol 2 no. 2-4 pt 1 (1993), pp. 590-596 [10.1016/0925-9635(93)90127-N] [abs].
  • Tachibana, T; Glass, JT, Correlation of interface chemistry to electrical properties of metal contacts on diamond, Diamond and Related Materials, vol 2 no. 5-7 pt 2 (1993), pp. 963-969 [10.1016/0925-9635(93)90259-5] [abs].
  • Stoner, BR; Ma, GH; Wolter, SD; Zhu, W; Wang, YC; Davis, RF; Glass, JT, Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol 2 no. 2-4 pt 1 (1993), pp. 142-146 [10.1016/0925-9635(93)90045-4] [abs].
  • Wolter, SD; Stoner, BR; Glass, JT; Ellis, PJ; Buhaenko, DS; Jenkins, CE; Southworth, P, Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation, Applied Physics Letters, vol 62 no. 11 (1993), pp. 1215-1217 [10.1063/1.108738] [abs].
  • Tachibana, T; Glass, JT; Nemanich, RJ, Effect of surface hydrogen on metal-diamond interface properties, Journal of Applied Physics, vol 73 no. 2 (1993), pp. 835-842 [10.1063/1.353322] [abs].
  • Bade, JP; Sahaida, SR; Stoner, BR; Windheim, JAV; Glass, JT; Miyata, K; Nishimura, K; Kobashi, K, Fabrication of diamond thin-film thermistors for high-temperature applications, Diamond and Related Materials, vol 2 no. 5-7 (1993), pp. 816-819 [abs].
  • Yang, PC; Zhu, W; Glass, JT, Nucleation of oriented diamond films on nickel substrates, Journal of Materials Research, vol 8 no. 8 (1993), pp. 1773-1776 [abs].
  • Wang, XH; Zhu, W; Windheim, JV; Glass, JT, Combustion growth of large diamond crystals, Journal of Crystal Growth, vol 129 no. 1-2 (1993), pp. 45-55 [abs].
  • Zhu, W; Yang, PC; Glass, JT, Oriented diamond films grown on nickel substrates, Applied Physics Letters, vol 63 no. 12 (1993), pp. 1640-1642 [10.1063/1.110721] [abs].
  • Windheim, JAV; Sivazlian, F; McClure, MT; Glass, JT; Prater, JT, Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch, Diamond and Related Materials, vol 2 no. 2-4 (1993), pp. 438-442 [abs].
  • Tachibana, T; Glass, JT; Thompson, DG, Titanium carbide rectifying contacts on boron-doped polycrystalline diamond, Diamond and Related Materials, vol 2 no. 1 (1993), pp. 37-40 [abs].
  • Tachibana, T; Glass, JT, Correlation of interface chemistry to electrical properties of metal contacts on diamond, Diamond and Related Materials, vol 2 no. 5-7 (1993), pp. 963-969 [abs].
  • Stoner, BR; Ma, GH; Wolter, SD; Zhu, W; Wang, YC; Davis, RF; Glass, JT, Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol 2 no. 2-4 (1993), pp. 142-146 [abs].
  • Zhu, W; Wang, XH; Stoner, BR; Kong, HS; Braun, MWH; Glass, JT, Geometric modeling of the diamond-β-SiC heteroepitaxial interface, Diamond and Related Materials, vol 2 no. 2-4 (1993), pp. 590-596 [abs].
  • Zhu, W; Wang, XH; Stoner, BR; Kong, HS; Braun, MWH; Glass, JT, Geometric modeling of the diamond-β-SiC heteroepitaxial interface, Diamond and Related Materials, vol 2 no. 2 -4 pt 1 (1993), pp. 590-596 [abs].
  • Windheim, JAV; Sivazlian, F; McClure, MT; Glass, JT; Prater, JT, Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch, Diamond and Related Materials, vol 2 no. 2 -4 pt 1 (1993), pp. 438-442 [abs].
  • Bade, JP; Sahaida, SR; Stoner, BR; Windheim, JAV; Glass, JT; Miyata, K; Nishimura, K; Kobashi, K, Fabrication of diamond thin-film thermistors for high-temperature applications, Diamond and Related Materials, vol 2 no. 5 -7 pt 2 (1993), pp. 816-819 [abs].
  • Stoner, BR; Ma, GH; Wolter, SD; Zhu, W; Wang, YC; Davis, RF; Glass, JT, Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol 2 no. 2 -4 pt 1 (1993), pp. 142-146 [abs].
  • Das, K; Venkatesan, V; Miyata, K; Dreifus, DL; Glass, JT, A review of the electrical characteristics of metal contacts on diamond, Thin Solid Films, vol 212 no. 1-2 (1992), pp. 19-24 [abs].
  • Tachibana, T; Williams, BE; Glass, JT, Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. I. Gold contacts: A non-carbide-forming metal, Physical Review B - Condensed Matter and Materials Physics, vol 45 no. 20 (1992), pp. 11968-11974 [10.1103/PhysRevB.45.11968] [abs].
  • Glass, JT; McCann, JF; Crothers, DSF, Electron capture at semirelativistic energies: distorted wave models, J. Phys. B, At. Mol. Opt. Phys. (UK), vol 25 no. 21 (1992), pp. 541-544 [10.1088/0953-4075/25/21/004] [abs].
  • Williams, B; Glass, J; Davis, R, Defect and interface structures of diamond thin films, R and D: Research and Development Kobe Steel Engineering Reports, vol 42 no. 2 (1992), pp. 13-16 [abs].
  • Stoner, BR; Glass, JT; Bergman, L; Nemanich, RJ; Zoltal, LD; Vandersande, JW, Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, Journal of Electronic Materials, vol 21 no. 6 (1992) [abs].
  • Wang, XH; Ma, GHM; Zhu, W; Glass, JT; Bergman, L; Turner, KF; Nemanich, RJ, Effects of boron doping on the surface morphology and structural imperfections of diamond films, Diamond and Related Materials, vol 1 no. 7 (1992), pp. 828-835 [abs].
  • Windheim, JAV; Glass, JT, Improved uniformity and selected area deposition of diamond by the oxy-acetylene flame method, Journal of Materials Research, vol 7 no. 8 (1992), pp. 2144-2150 [abs].
  • Stoner, BR; Ma, GHM; Wolter, SD; Glass, JT, Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy, Physical Review B - Condensed Matter and Materials Physics, vol 45 no. 19 (1992), pp. 11067-11084 [10.1103/PhysRevB.45.11067] [abs].
  • Angus, JC; Sunkara, M; Sahaida, SR; Glass, JT, Twinning and faceting in early stages of diamond growth by chemical vapor deposition, Journal of Materials Research, vol 7 no. 11 (1992), pp. 3001-3009 [abs].
  • Stoner, BR; Glass, JT; Bergman, L; Nemanich, RJ; Zoltal, LD; Vandersande, JW, Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, Journal of Electronic Materials, vol 21 no. 6 (1992), pp. 629-634 [10.1007/BF02655431] [abs].
  • Tachibana, T; Glass, JT, Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond, Journal of Applied Physics, vol 72 no. 12 (1992), pp. 5912-5918 [10.1063/1.351899] [abs].
  • Stoner, BR; Glass, JT, Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition, Applied Physics Letters, vol 60 no. 6 (1992), pp. 698-700 [10.1063/1.106541] [abs].
  • Stoner, BR; Williams, BE; Wolter, SD; Nishimura, K; Glass, JT, In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond, Journal of Materials Research, vol 7 no. 2 (1992), pp. 257-260 [abs].
  • Tachibana, T; Williams, BE; Glass, JT, Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: A carbide-forming metal, Physical Review B - Condensed Matter and Materials Physics, vol 45 no. 20 (1992), pp. 11975-11981 [10.1103/PhysRevB.45.11975] [abs].
  • Williams, BE; Tachibana, T; Stoner, BR; Glass, JT, SURFACE AND MICROSTRUCTURAL CHARACTERIZATION OF THE NUCLEATION AND GROWTH OF DIAMOND THIN-FILMS, ACS National Meeting Book of Abstracts, vol 202 (1991), pp. 121-PHYS [abs].
  • Miyauchi, S; Kumagai, K; Miyata, K; Nishimura, K; Kobashi, K; Nakaue, A; Glass, JT; Buckley-Golder, IM, Microfabrication of diamond films: selective deposition and etching, Surface and Coatings Technology, vol 47 no. 1-3 (1991), pp. 465-473 [abs].
  • Ma, GHM; Williams, BE; Glass, JT; Prater, JT, Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase, Diamond and Related Materials, vol 1 no. 1 (1991), pp. 25-32 [abs].
  • Nishimura, K; Das, K; Glass, JT, Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition, Journal of Applied Physics, vol 69 no. 5 (1991), pp. 3142-3148 [10.1063/1.348582] [abs].
  • Turner, KF; LeGrice, YM; Stoner, BR; Glass, JT; Nemanich, RJ, Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol 9 no. 2 (1991), pp. 914-919 [10.1116/1.585494] [abs].
  • Braun, MWH; Kong, HS; Glass, JT; Davis, RF, The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system, Journal of Applied Physics, vol 69 no. 4 (1991), pp. 2679-2681 [10.1063/1.348663] [abs].
  • Das, K; Venkatesan, V; Miyata, K; Dreifus, DL; Glass, JT, Review of the electrical characteristics of metal contacts on diamond, Materials Science Monographs, vol 73 (1991) [abs].
  • Turner, KF; Stoner, BR; Bergman, L; Glass, JT; Nemanich, RJ, Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy, Journal of Applied Physics, vol 69 no. 9 (1991), pp. 6400-6405 [10.1063/1.348843] [abs].
  • Zhu, W; Stoner, BR; Williams, BE; Glass, JT, Growth and characterization of diamond films on nondiamond substrates for electronic applications, Proceedings of the IEEE, vol 79 no. 5 (1991), pp. 621-646 [10.1109/5.90129] [abs].
  • Geis, MW; Smith, HI; Argoitia, A; Angus, J; Ma, GHM; Glass, JT; Butler, J; Robinson, CJ; Pryor, R, Large-area mosaic diamond films approaching single-crystal quality, Applied Physics Letters, vol 58 no. 22 (1991), pp. 2485-2487 [10.1063/1.104851] [abs].
  • Murphy, J; Glass, JT; Majerowicz, S; Green, RE, LASER INTERFEROMETRIC PROBE FOR DETECTION OF ACOUSTIC-EMISSION, Materials Evaluation, vol 48 no. 6 (1990), pp. 714-720 [abs].
  • Williams, BE; Glass, JT; Davis Robert, F; Kobashi, K, Analysis of defect structures and substrate/film interfaces of diamond thin films, Journal of Crystal Growth, vol 99 no. 1-4 pt 2 (1990), pp. 1168-1176 [abs].
  • Ma, GHM; Lee, YH; Glass, JT, Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor deposition, Journal of Materials Research, vol 5 no. 11 (1990), pp. 2367-2377 [abs].
  • Lee, YH; Bachmann, KJ; Glass, JT; LeGrice, YM; Nemanich, RJ, Vapor deposition of diamond thin films on various substrates, Applied Physics Letters, vol 57 no. 18 (1990), pp. 1916-1918 [10.1063/1.104011] [abs].
  • Kobashi, K; Nakaue, A; Glass, JT; Buckley-Golder, IM, Properties and applications of vapor grown diamond, Carbon, vol 28 no. 6 (1990), pp. 756-757 [abs].
  • Buckley-Golder, IM; Chalker, PR; Glass, JT; Kobashi, K; Nakaue, A, Determination of impurity dopant distributions in diamond films by SIMS, Carbon, vol 28 no. 6 (1990) [abs].
  • Lee, YH; Richard, PD; Bachmann, KJ; Glass, JT, Bias-controlled chemical vapor deposition of diamond thin films, Applied Physics Letters, vol 56 no. 7 (1990), pp. 620-622 [10.1063/1.102716] [abs].
  • More, KL; Hua, SK; Glass, JT; Davis, RF, Electron microscopy of defects in epitaxical β-SiC thin films grown on silicon and carbon {0001} faces of α-SiC substrates, Journal of the American Ceramic Society, vol 73 no. 5 (1990), pp. 1283-1288 [abs].
  • Williams, BE; Kong, HS; Glass, JT, Electron microscopy of vapor phase deposited diamond, Journal of Materials Research, vol 5 no. 4 (1990), pp. 801-810 [abs].
  • Shroder, RE; Nemanich, RJ; Glass, JT, Analysis of the composite structures in diamond thin films by Raman spectroscopy, Physical Review B - Condensed Matter and Materials Physics, vol 41 no. 6 (1990), pp. 3738-3745 [10.1103/PhysRevB.41.3738] [abs].
  • Yu, CW; Hua, SK; Glass, JT; Davis, RF; More, KL, Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films, Journal of the American Ceramic Society, vol 73 no. 5 (1990), pp. 1289-1296 [abs].
  • Williams, BE; Glass, JT; Davis, RF; Kobashi, K, Analysis of defect structures and substrate/film interfaces of diamond thin films, Journal of Crystal Growth, vol 99 no. 1 -4 pt 2 (1990), pp. 1168-1176 [abs].
  • Ryu, J; Kim, HJ; Glass, JT; Davis, RF, The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen, Journal of Electronic Materials, vol 18 no. 2 (1989), pp. 157-165 [10.1007/BF02657402] [abs].
  • Kong, HS; Glass, JT; Davis, RF, Growth rate, surface morphology, and defect microstructures of β-SiC films chemically vapor deposited on 6H-SiC substrates, Journal of Materials Research, vol 4 no. 1 (1989), pp. 204-214 [abs].
  • Williams, BE; Glass, JT; Davis, RF; Kobashi, K; More, KL, Microstructural characterization of diamond thin films, Proceedings - The Electrochemical Society, vol 89 no. 12 (1989) [abs].
  • Williams, BE; Glass, JT, Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures, Journal of Materials Research, vol 4 no. 2 (1989), pp. 373-384 [abs].
  • Glass, JT; Jr, GLC; Stoner, GE, Effect of phosphoric acid concentration on electrocatalysis, Journal of the Electrochemical Society, vol 136 no. 3 (1989), pp. 656-660 [abs].
  • Kong, HS; Wang, YC; Glass, JT; Davis, RF, The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films, J. Mater. Res. (USA), vol 3 no. 3 (1988), pp. 521-530 [abs].
  • Nemanich, RJ; Glass, JT; Lucovsky, G; Shroder, RE, Raman scattering characterization of carbon bonding in diamond and diamondlike thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol 6 no. 3 (1988), pp. 1783-1787 [10.1116/1.575297] [abs].
  • Glass, ; T, J; Cahen, ; L, G; Jr, , The electrochemical stability and calculated free energies of PtCr alloys, J. Electrochem. Soc. (USA), vol 135 no. 7 (1988), pp. 1650-1658 [abs].
  • Davis, RF; Sitar, Z; Williams, BE; Kong, HS; Kim, HJ; Palmour, JW; Edmond, JA; Ryu, J; Glass, JT; Carter, CHJ, Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide, Materials Science & Engineering B: Solid-State Materials for Advanced Technology, vol B1 no. 1 (1988), pp. 77-104 [10.1016/0921-5107(88)90032-3] [abs].
  • Glass, JT; Williams, BE; Davis, RF, Chemical vapor deposition and characterization of diamond films grown via microwave plasma enhanced CVD, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol 877 (1988), pp. 56-63 [abs].
  • Kong, HS; Glass, JT; Davis, RF, Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates, Journal of Applied Physics, vol 64 no. 5 (1988), pp. 2672-2679 [10.1063/1.341608] [abs].
  • Kim, HJ; Kong, H; Edmond, JA; Ryu, J; Palmour, J; Jr, CCH; Glass, JT; Davis, RF, Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol 6 no. 3 (1988), pp. 1954-1956 [10.1116/1.575214] [abs].
  • Edmond, JA; Ryu, J; Glass, JT; Davis, RF, ELECTRICAL CONTACTS TO BETA SILICON CARBIDE THIN FILMS., Journal of the Electrochemical Society, vol 135 no. 2 (1988), pp. 359-362 [abs].
  • Williams, BE; Glass, JT; Davis, RF; Kobashi, K; Horiuchi, T, Structural and chemical characterization of diamond films and diamond-substrate interfaces, J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol 6 no. 3 (1988), pp. 1819-1820 [10.1116/1.575261] [abs].
  • Kong, HS; Jiang, BL; Glass, JT; Rozgonyi, GA; More, KL, An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates, Journal of Applied Physics, vol 63 no. 8 (1988), pp. 2645-2650 [10.1063/1.341004] [abs].
  • Davis, RF; Sitar, Z; Williams, BE; Kong, HS; Kim, HJ; Palmour, JW; Edmond, JA; Ryu, J; Glass, JT; Jr, CHC, Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide, Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol 1 no. 1 (1988), pp. 77-104 [abs].
  • Bumgarner, JW; Kong, HS; Kim, HJ; Palmour, JW; Edmond, JA; Glass, JT; Davis, RF, MONOCRYSTALLINE beta -SIC SEMICONDUCTOR THIN FILMS: EPITAXIAL GROWTH, DOPING, AND FET DEVICE DEVELOPMENT., Proceedings - Electronic Components and Technology Conference (1988), pp. 342-349 [abs].
  • Davis, RF; Kim, HJ; Kong, H; Edmond, JA; Glass, JT, EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS, Journal of Electronic Materials, vol 16 no. 4 (1987), pp. A23-A23 [abs].
  • Kong, HS; Palmour, JW; Glass, JT; Davis, RF, Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition, Applied Physics Letters, vol 51 no. 6 (1987), pp. 442-444 [10.1063/1.98416] [abs].
  • Glass, JT; Jr, GLC; Stoner, GE, EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PtCr ALLOYS., Journal of the Electrochemical Society, vol 134 no. 1 (1987), pp. 58-65 [abs].
  • Kim, HJ; Edmond, JA; Ryu, J; Kong, H; Jr, CHC; Glass, JT; Davis, RF, Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims, International SAMPE Symposium and Exhibition (Proceedings), vol 1 (1987), pp. 370-381 [abs].
  • Glass, JT; Cahen, GL; Stoner, GE, DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PTCR ALLOYS, Journal of Electrochemical Society, vol 133 no. 3 (1986), pp. C120-C120 [abs].
  • Glass, JT; Jr, GLC; Stoner, GE, DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES AT PtCr ALLOYS., Proceedings - The Electrochemical Society, vol 86-10 (1986), pp. 231-256 [abs].
  • Kong, HS; Glass, JT; Davis, RF, Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition, Applied Physics Letters, vol 49 no. 17 (1986), pp. 1074-1076 [10.1063/1.97479] [abs].
  • Glass, JT; Green, RE, ACOUSTIC EMISSION DURING DEFORMATION AND FRACTURE OF THREE NAVAL ALLOY STEELS., Materials Evaluation, vol 43 no. 7 (1985), pp. 864-872 [abs].